MGF4953B Overview
The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
| Part number | MGF4953B |
|---|---|
| Datasheet | MGF4953B_MitsubishiElectric.pdf |
| File Size | 145.16 KB |
| Manufacturer | Mitsubishi Electric |
| Description | SUPER LOW NOISE InGaAs |
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The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
See all Mitsubishi Electric datasheets
| Part Number | Description |
|---|---|
| MGF4953A | SUPER LOW NOISE InGaAs HEMT |
| MGF4954A | SUPER LOW NOISE InGaAs HEMT |
| MGF4910D | (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT |
| MGF4910E | (MGF4910E Series) Super Low Noise InGaAs HEMT |
| MGF4914D | (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT |
| MGF4914E | (MGF4910E Series) Super Low Noise InGaAs HEMT |
| MGF4916D | (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT |
| MGF4917D | (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT |
| MGF4918E | (MGF4910E Series) Super Low Noise InGaAs HEMT |
| MGF4919E | (MGF4910E Series) Super Low Noise InGaAs HEMT |